Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 100 V | - 140 V | - 6 V | 125 MHz | 1.2 W | - 55 C | Diodes Incorporated | Single | - 3.5 A | 4000 | 4.01 mm | 4.77 mm | 3.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX953 | Transistors | Si | 453,600 mg | 2.41 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 100 V | - 140 V | - 6 V | 125 MHz | 1.2 W | - 55 C | Diodes Incorporated | Single | - 3.5 A | 100 at 10 mA, 1 V | 2000 | 4.01 mm | 4.77 mm | 3.5 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX9 | Transistors | Si | 453,600 mg | 2.41 mm | ||||
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поиск предложений
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поиск предложений
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+ 200 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 330 V | - 6 V | - 140 mV | 85 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 6 V | - 400 mV | 85 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 6 V | - 400 mV | 85 MHz | 1.2 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 2000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX958 | Transistors | Si | 453,600 mg | 2.41 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 12 V | - 15 V | - 6 V | - 50 mV | 80 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 12 V | - 15 V | - 6 V | - 220 mV | 80 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 20 V | 20 V | 5 V | 155 mV | 210 MHz | 500 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 50 V | 50 V | 5 V | 160 mV | 215 MHz | 500 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | PNP | - 12 V | - 12 V | - 5 V | - 185 mV | 220 MHz | 500 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | PNP | - 20 V | - 20 V | - 5 V | - 180 mV | 210 MHz | 500 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 11 V | 20 V | 3 V | 500 mV | 3.2 GHz | 330 mW | Diodes Incorporated | Single | 56 | 3000 | 50 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZUMTS17 | Transistors | Si | 5 mg | ||||||||
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поиск предложений
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Diodes Incorporated | |||||||||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-6 | PNP | - 20 V | - 25 V | - 7.5 V | 110 MHz | 1.7 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | SOT-89-3 | Diodes Incorporated | 1000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | 52 mg | |||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 40 V | - 50 V | - 7.5 V | 152 MHz | 3 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 40 V | 50 V | 7.5 V | 152 MHz | 3000 mW | - 55 C | Diodes Incorporated | Single | 200 | 200 | 4000 | 1.6 mm | 4.6 mm | 5.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZX5T3 | Transistors | Si | 52 mg | 2.6 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 60 V | 150 V | 7 V | 130 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 4.5 A | 4000 | 4.01 mm | 4.77 mm | 4.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZX5T851 | Transistors | Si | 2.41 mm | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 60 V | 150 V | 7 V | 130 MHz | 3 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 60 V | 150 V | 7 V | 130 MHz | 3000 mW | - 55 C | Diodes Incorporated | Single | 6 A | 1000 | 1.65 mm | 6.7 mm | 6 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZX5T851 | Transistors | Si | 112 mg | 3.7 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 100 V | 200 V | 7 V | 180 mV | 130 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 100 V | 200 V | 7 V | 180 mV | 130 MHz | 3000 mW | - 55 C | Diodes Incorporated | Single | 6 A | 1000 | 1.65 mm | 6.7 mm | 6 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZX5T853 | Transistors | Si | 112 mg | 3.7 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 30 V | - 50 V | - 7 V | 110 MHz | 3 W | - 55 C |
