Главная Каталог Полупроводниковые приборы Транзисторы Bipolar Transistors - BJT

Bipolar Transistors - BJT

Товар	Цена	Maximum Operating Temperature	Manufacturer	Package/Case	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Pd - Power Dissipation	Minimum Operating Temperature	Brand	Configuration	Continuous Collector Current	DC Collector/Base Gain hFE Min	DC Current Gain hFE Max	Factory Pack Quantity	Height	Length	Maximum DC Collector Current	Mounting Style	Packaging	Product Category	Product Type	Qualification	RoHS	Series	Subcategory
ZTX796A ZTX796A Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 200 V	- 200 V	- 5 V	- 0.3 V	100 MHz	1 W	- 55 C
ZTX796A ZTX796A Diodes Incorporated	поиск предложений
ZTX849 ZTX849 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	30 V	80 V	6 V	180 mV	100 MHz	1.2 W	- 55 C
ZTX849 ZTX849 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	30 V	80 V	6 V	180 mV	100 MHz	1.2 W	- 55 C	Diodes Incorporated	Single	5 A	4000	4.01 mm	4.77 mm	5 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX849	Transistors	Si	453,600 mg	2.41 mm
ZTX849STZ ZTX849STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	30 V	80 V	6 V	180 mV	100 MHz	1.2 W	- 55 C
ZTX851 ZTX851 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	150 V	6 V	180 mV	130 MHz	1.2 W	- 55 C
ZTX851 ZTX851 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	150 V	6 V	180 mV	130 MHz	1.2 W	- 55 C	Diodes Incorporated	Single	5 A	4000	4.01 mm	4.77 mm	5 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX851	Transistors	Si	453,600 mg	2.41 mm
ZTX851STZ ZTX851STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	150 V	6 V	250 mV	130 MHz	1.2 W	- 55 C
ZTX853 ZTX853 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	200 V	6 V	160 mV	130 MHz	1.2 W	- 55 C
ZTX853 ZTX853 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	200 V	6 V	160 mV	130 MHz	1.2 W	- 55 C	Diodes Incorporated	Single	4 A	4000	4.01 mm	4.77 mm	4 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX853	Transistors	Si	453,600 mg	2.41 mm
ZTX853QSTZ ZTX853QSTZ Diodes Incorporated	поиск предложений
ZTX855 ZTX855 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	150 V	250 V	6 V	210 mV	90 MHz	1.2 W	- 55 C
ZTX855 ZTX855 Diodes Incorporated	поиск предложений
ZTX855STZ ZTX855STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	150 V	250 V	6 V	210 mV	90 MHz	1.2 W	- 55 C
ZTX857 ZTX857 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	300 V	330 V	6 V	80 MHz	1.2 W	- 55 C
ZTX857QSTZ ZTX857QSTZ Diodes Incorporated Diodes Incorporated	поиск предложений	Diodes Incorporated	Diodes Incorporated	4000	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Transistors
ZTX857STZ ZTX857STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	300 V	330 V	6 V	80 MHz	1.2 W	- 55 C
ZTX869 ZTX869 Diodes Incorporated	поиск предложений	+ 200 C	Diodes Incorporated	TO-92-3	NPN	25 V	60 V	6 V	180 mV	100 MHz	1.2 W	- 55 C
ZTX869 ZTX869 Diodes Incorporated	поиск предложений
ZTX948 ZTX948 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 200 C	Diodes Incorporated	TO-92-3	PNP	- 20 V	- 40 V	- 6 V	- 180 mV	80 MHz	1.2 W	- 55 C	Diodes Incorporated	Single	- 4.5 A	4000	4.01 mm	4.77 mm	- 4.5 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX9	Transistors	Si	453,600 mg	2.41 mm
ZTX949 ZTX949 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	30 V	- 50 V	- 6 V	100 MHz	1.2 W	- 55 C
ZTX949STZ ZTX949STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	30 V	- 50 V	- 6 V	100 MHz	1.2 W	- 55 C
ZTX951 ZTX951 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	60 V	- 100 V	- 6 V	120 MHz	1.2 W	- 55 C
ZTX951 ZTX951 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	60 V	- 100 V	- 6 V	120 MHz	1.2 W	- 55 C	Diodes Incorporated	Single	- 4 A	4000	4.01 mm	4.77 mm	4 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX951	Transistors	Si	450 mg	2.41 mm
ZTX953 ZTX953 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	100 V	- 140 V	- 6 V	125 MHz	1.2 W	- 55 C