Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 100 V | 120 V | - 5 V | 140 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 100 V | 120 V | - 5 V | 140 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 2 A | 4000 | 4.01 mm | 4.77 mm | 2 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX753 | Transistors | Si | 453,600 mg | 2.41 mm | |||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 4000 | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | ||||||||||||||||||||||||||
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поиск предложений
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+ 200 C | Diodes Incorporated | TO-92-3 | PNP | - 100 V | - 120 V | - 5 V | - 300 mV | 140 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 200 C | Diodes Incorporated | TO-92-3 | PNP | - 100 V | - 120 V | - 5 V | - 300 mV | 140 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 2 A | 2000 | 4.01 mm | 4.77 mm | - 2 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX753 | Transistors | Si | 453,600 mg | 2.41 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 300 V | - 5 V | - 0.5 V | 30 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 300 V | - 5 V | - 0.5 V | 30 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 50 at 100 mA, 5 V, 40 at 10 mA, 5 V | 50 at 100 mA, 5 V | 4000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX757 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 300 V | - 300 V | - 5 V | 30 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 5 V | - 0.5 V | 50 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 5 V | - 0.5 V | 50 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | 50 at 1 mA, 5 V | 4000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX758 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 400 V | - 400 V | - 5 V | - 0.5 V | 50 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | 50 at 1 mA, 5 V | 2000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX758 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 15 V | - 20 V | - 5 V | - 0.5 V | 150 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 3 A | 300 at 10 mA, 1 V, 250 at 1 A, 1 V, 200 at 2 A, 1 V, 80 at 10 A, 2 V | 300 at 10 mA, 1 V | 4000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX788 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 15 V | - 20 V | - 5 V | - 0.5 V | 150 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 3 A | 300 at 10 mA, 1 V, 250 at 1 A, 1 V, 200 at 2 A, 1 V, 80 at 10 A, 2 V | 300 at 10 mA, 1 V | 2000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX788 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 15 V | - 15 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | 15 V | 15 V | 5 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 500 at 10 mA, 2 V, 400 at 1 A, 2 V, 300 at 2 A, 2 V, 150 at 6 A, 2 V | 500 at 10 mA, 2 V | 2000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX788 | Transistors | Si | 2.41 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 25 V | - 25 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 25 V | - 25 V | - 5 V | - 0.5 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 3 A | 300 at 10 mA, 2 V | 2000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX789 | Transistors | Si | 453,600 mg | 2.41 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 40 V | - 50 V | - 5 V | - 0.75 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 40 V | - 50 V | - 5 V | - 0.75 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 2 A | 300 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 1 A, 2 V, 150 at 2 A, 2 V | 300 at 10 mA, 2 V | 4000 | 4.01 mm | 4.77 mm | 2 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX790 | Transistors | Si | 453,600 mg | 2.41 mm | ||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 70 V | - 75 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 70 V | - 75 V | - 5 V | - 0.5 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 140 V | - 140 V | - 5 V | - 0.3 V | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 140 V | - 140 V | - 5 V | - 0.3 V | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | - 0.5 A | 4000 | 4.01 mm | 4.77 mm | 0.5 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX795 | Transistors | Si | 453,600 mg | 2.41 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 140 V | - 140 V | - 5 V | - 0.3 V | 100 MHz | 1 W | - 55 C |
