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Bipolar Transistors - BJT

Товар	Цена	Maximum Operating Temperature	Manufacturer	Package/Case	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Pd - Power Dissipation	Minimum Operating Temperature	Brand	Configuration	Continuous Collector Current	DC Collector/Base Gain hFE Min	DC Current Gain hFE Max	Factory Pack Quantity	Height	Length	Maximum DC Collector Current	Mounting Style	Packaging	Product Category	Product Type	Qualification	RoHS	Series	Subcategory
ZTX550 ZTX550 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 45 V	- 60 V	- 5 V	- 0.25 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	- 1 A	4000	4.01 mm	4.77 mm	1 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX550	Transistors	Si	453,600 mg	2.41 mm
ZTX550QSTZ ZTX550QSTZ Diodes Incorporated	поиск предложений
ZTX550STZ ZTX550STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 45 V	- 60 V	- 5 V	- 0.25 V	150 MHz	1 W	- 55 C
ZTX551STZ ZTX551STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 60 V	- 80 V	- 5 V	- 0.35 V	150 MHz	1 W	- 55 C
ZTX551STZ ZTX551STZ Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 60 V	- 80 V	- 5 V	- 0.35 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	- 1 A	2000	4.01 mm	4.77 mm	1 A	Through Hole	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX551	Transistors	453,600 mg	2.41 mm
ZTX553 ZTX553 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 100 V	- 120 V	- 5 V	- 0.3 V	150 MHz	1 W	- 55 C
ZTX553 ZTX553 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 100 V	- 120 V	- 5 V	- 0.3 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	- 1 A	4000	4.01 mm	4.77 mm	1 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX553	Transistors	Si	453,600 mg	2.41 mm
ZTX558 ZTX558 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 400 V	- 400 V	- 5 V	- 0.5 V	50 MHz	1 W	- 55 C
ZTX558 ZTX558 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 400 V	- 400 V	- 5 V	- 0.5 V	50 MHz	1 W	- 55 C	Diodes Incorporated	Single	- 0.2 A	4000	4.01 mm	4.77 mm	0.2 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX558	Transistors	Si	453,600 mg	2.41 mm
ZTX558QSTZ ZTX558QSTZ Diodes Incorporated Diodes Incorporated	поиск предложений	Diodes Incorporated	Diodes Incorporated	4000	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Transistors
ZTX560 ZTX560 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	E-Line-3	PNP	- 500 V	- 500 V	- 5 V	- 0.5 V	60 MHz	1 W	- 55 C
ZTX601QSTZ ZTX601QSTZ Diodes Incorporated Diodes Incorporated	поиск предложений	Diodes Incorporated	Diodes Incorporated	4000	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Transistors
ZTX618 ZTX618 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	20 V	20 V	5 V	210 mV	140 MHz	1 W	- 55 C
ZTX618STZ ZTX618STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	20 V	20 V	5 V	210 mV	140 MHz	1 W	- 55 C
ZTX649 ZTX649 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	25 V	35 V	5 V	0.23 V	240 MHz	1 W	- 55 C
ZTX649 ZTX649 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	25 V	35 V	5 V	0.23 V	240 MHz	1 W	- 55 C	Diodes Incorporated	Single	2 A	4000	4.01 mm	4.77 mm	2 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX649	Transistors	Si	453,600 mg	2.41 mm
ZTX649STZ ZTX649STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	25 V	35 V	5 V	0.23 V	240 MHz	1 W	- 55 C
ZTX651 ZTX651 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	80 V	5 V	0.23 V	175 MHz	1 W	- 55 C
ZTX651QSTZ ZTX651QSTZ Diodes Incorporated Diodes Incorporated	поиск предложений	Diodes Incorporated	Diodes Incorporated	2000	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Transistors
ZTX651STZ ZTX651STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	80 V	5 V	0.23 V	175 MHz	1 W	- 55 C
ZTX653 ZTX653 Diodes Incorporated	поиск предложений	+ 200 C	Diodes Incorporated	TO-92-3	NPN	100 V	120 V	5 V	230 mV	175 MHz	1 W	- 55 C
ZTX653 ZTX653 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 200 C	Diodes Incorporated	TO-92-3	NPN	100 V	120 V	5 V	230 mV	175 MHz	1 W	- 55 C	Diodes Incorporated	Single	2 A	4000	4.01 mm	4.77 mm	2 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX653	Transistors	Si	453,600 mg	2.41 mm
ZTX653STZ ZTX653STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	120 V	5 V	0.23 V	175 MHz	1 W	- 55 C
ZTX657 ZTX657 Diodes Incorporated	поиск предложений	+ 200 C	Diodes Incorporated	TO-92-3	NPN	300 V	300 V	5 V	500 mV	30 MHz	1 W	- 55 C
ZTX657 ZTX657 Diodes Incorporated	поиск предложений