Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN, PNP | 100 V | 120 V | 6 V | 0.23 V | 175 MHz | 2.75 W | - 55 C | Diodes Incorporated | Dual | 2 A | 4000 | 1.6 mm | 6.7 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZDT6753 | Transistors | Si | 3.7 mm | |||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN, PNP | 45 V, 40 V | 45 V, 50 V | 5 V | 500 mV | 150 MHz | 2.75 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN, PNP | 45 V, 40 V | 45 V, 50 V | 5 V | 500 mV | 150 MHz | 2.75 W | - 55 C | Diodes Incorporated | Dual | 2 A | 500 at 100 mA, 2 V at NPN, 400 at 1 A, 2 V at NPN, 150 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP, 150 at 2 A, 2 V at PNP | 500 | 1000 | 1.6 mm | 6.7 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZDT6790 | Transistors | Si | 117 g | 3.7 mm | ||
|
|
поиск предложений
|
Diodes Incorporated | Diodes Incorporated | 1000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | Si | ||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN | 120 V | 120 V | 5 V | 0.5 V | 130 MHz | 2.75 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | PNP | - 25 V | - 35 V | - 5 V | - 0.23 V | 160 MHz | 2.75 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | PNP | - 60 V | - 80 V | - 5 V | - 0.28 V | 140 MHz | 2.75 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | PNP | - 140 V | - 140 V | - 5 V | - 250 mV | 100 MHz | 2.75 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN, PNP | 20 V | 20 V | 5 V | 130 mV | 140 MHz | 2 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN, PNP | 20 V | 20 V | 5 V | 130 mV | 140 MHz | 2000 mW | - 55 C | Diodes Incorporated | Quad | 2.5 A | 200 at 10 mA, 2 V at NPN, 300 at 100 mA, 2 V at NPN, 200 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 150 at 2 A, 2 V at PNP, 35 at 4 A, 2 V at PNP | 200 | 1000 | 1.6 mm | 6.7 mm | 2.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZHB6718 | Transistors | Si | 1 g | 3.7 mm | ||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN | 40 V | 50 V | 5 V | - 0.75 V | 100 MHz, 150 MHz | 2 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SM-8 | NPN, PNP | 70 V | 70 V | 5 V | - 0.5 V | 100 MHz, 150 MHz | 2 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | SOT-26-6 | NPN | 50 V | 50 V | 7 V | 24 mV | 215 MHz | 700 mW | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
Diodes Incorporated | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
|
|
поиск предложений
|
Diodes Incorporated | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 17.5 V | 50 V | 5 V | 150 MHz | 1 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 17.5 V | 50 V | 5 V | 150 MHz | 1 W | - 55 C | Diodes Incorporated | Single | 4 A | 280 at 10 mA, 2 V, 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 220 at 4 A, 2 V, 50 at 20 A, 2 V | 280 at 10 mA, 2 V | 4000 | 4.01 mm | 4.77 mm | 4 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX1048 | Transistors | Si | 453,600 mg | 2.41 mm | |||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 17.5 V | 50 V | 5 V | 150 MHz | 1 W | - 55 C | Diodes Incorporated | Single | 4 A | 280 at 10 mA, 2 V, 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 220 at 4 A, 2 V, 50 at 20 A, 2 V | 280 at 10 mA, 2 V | 2000 | 4.01 mm | 4.77 mm | 4 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX1048 | Transistors | Si | 453,600 mg | 2.41 mm | |||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | E-Line-3 | NPN | 25 V | 80 V | 5 V | 180 MHz | 1 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 25 V | 80 V | 5 V | 220 mV | 180 MHz | 1 W | - 55 C | |||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 40 V | 150 V | 5 V | 155 MHz | 1 W | - 55 C | ||||||||||||||||||||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 40 V | 150 V | 5 V | 155 MHz | 1 W | - 55 C | Diodes Incorporated | Single | 4 A | 290 at 10 mA, 2 V, 300 at 1 A, 2 V, 190 at 4 A, 2 V, 45 at 10 A, 2 V | 290 at 10 mA, 2 V | 4000 | 4.01 mm | 4.77 mm | 4 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX1051 | Transistors | Si | 453,600 mg | 2.41 mm | |||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 40 V | 150 V | 5 V | 155 MHz | 1 W | - 55 C | Diodes Incorporated | Single | 4 A | 290 at 10 mA, 2 V, 300 at 1 A, 2 V, 190 at 4 A, 2 V, 45 at 10 A, 2 V | 290 at 10 mA, 2 V | 2000 | 4.01 mm | 4.77 mm | 4 A | Through Hole | Ammo Pack | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX1051 | Transistors | Si | 453,600 mg | 2.41 mm | |||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | NPN | 75 V | 150 V | 5 V | 140 MHz | 1 W | - 55 C | Diodes Incorporated | Single | 3 A | 4000 | 4.01 mm | 4.77 mm | 3 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX1053 | Transistors | Si | 453,600 mg | 2.41 mm | |||||
|
|
поиск предложений
|
+ 150 C | Diodes Incorporated | TO-92-3 | PNP | - 12 V | - 15 V | - 5 V | - 175 mV | 115 MHz | 1 W | - 55 C | Diodes Incorporated | Single | - 4 A | 270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 2 A, 2 V, 170 at 4 A, 2 V, 90 at 10 A, 2 V | 270 at 10 mA, 2 V | 4000 | 4.01 mm | 4.77 mm | 4 A | Through Hole | Bulk | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZTX1147 | Transistors | Si | 453,600 mg | 2.41 mm |
