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Bipolar Transistors - BJT

Товар	Цена	Maximum Operating Temperature	Manufacturer	Package/Case	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Pd - Power Dissipation	Minimum Operating Temperature	Brand	Configuration	Continuous Collector Current	DC Collector/Base Gain hFE Min	DC Current Gain hFE Max	Factory Pack Quantity	Height	Length	Maximum DC Collector Current	Mounting Style	Packaging	Product Category	Product Type	Qualification	RoHS	Series	Subcategory	Technology	Unit Weight
ZTX1149A ZTX1149A Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 25 V	- 30 V	- 5 V	- 200 mV	135 MHz	1 W	- 55 C
ZTX1149ASTZ ZTX1149ASTZ Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 25 V	- 30 V	- 5 V	- 200 mV	135 MHz	1 W	- 55 C	Diodes Incorporated	Single	- 3 A	270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V	270 at 10 mA, 2 V	2000	4.01 mm	4.77 mm	3 A	Through Hole	Ammo Pack	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX1149	Transistors	Si	453,600 mg	2.41 mm
ZTX415 ZTX415 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	260 V	6 V	0.5 V	40 MHz	680 mW	- 55 C
ZTX415STZ ZTX415STZ Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	260 V	6 V	0.5 V	40 MHz	680 mW	- 55 C	Diodes Incorporated	Single	0.5 A	25 at 10 mA, 10 V	2000	4.01 mm	4.77 mm	0.5 A	Through Hole	Ammo Pack	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX415	Transistors	Si	453,600 mg	2.41 mm
ZTX449 ZTX449 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	30 V	50 V	5 V	1 V	150 MHz	1 W	- 55 C
ZTX449STZ ZTX449STZ Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	30 V	50 V	5 V	1 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	1 A	2000	4.01 mm	4.77 mm	1 A	Through Hole	Ammo Pack	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX449	Transistors	Si	453,600 mg	2.41 mm
ZTX450 ZTX450 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	45 V	60 V	5 V	150 MHz	1 W	- 55 C
ZTX450 ZTX450 Diodes Incorporated	поиск предложений
ZTX450QSTZ ZTX450QSTZ Diodes Incorporated Diodes Incorporated	поиск предложений	Diodes Incorporated	Diodes Incorporated	4000	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Transistors
ZTX450STZ ZTX450STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	45 V	60 V	5 V	150 MHz	1 W	- 55 C
ZTX450STZ ZTX450STZ Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	45 V	60 V	5 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	1 A	2000	4.01 mm	4.77 mm	1 A	Through Hole	Ammo Pack	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX450	Transistors	Si	453,600 mg	2.41 mm
ZTX451 ZTX451 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	80 V	5 V	0.35 V	150 MHz	1 W	- 55 C
ZTX451 ZTX451 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	80 V	5 V	0.35 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	1 A	4000	4.01 mm	4.77 mm	1 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX451	Transistors	Si	453,600 mg	2.41 mm
ZTX451STZ ZTX451STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	80 V	5 V	0.35 V	150 MHz	1 W	- 55 C
ZTX451STZ ZTX451STZ Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	60 V	80 V	5 V	0.35 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	1 A	50 at 150 mA, 10 V	2000	4.01 mm	4.77 mm	1 A	Through Hole	Ammo Pack	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX451	Transistors	Si	453,600 mg	2.41 mm
ZTX453 ZTX453 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	120 V	5 V	0.7 V	150 MHz	1 W	- 55 C
ZTX453 ZTX453 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	120 V	5 V	0.7 V	150 MHz	1 W	- 55 C	Diodes Incorporated	Single	1 A	4000	4.01 mm	4.77 mm	1 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX453	Transistors	Si	453,600 mg	2.41 mm
ZTX453STZ ZTX453STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	100 V	120 V	5 V	0.7 V	150 MHz	1 W	- 55 C
ZTX455 ZTX455 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	140 V	160 V	5 V	0.7 V	100 MHz	1 W	- 55 C
ZTX455QSTZ ZTX455QSTZ Diodes Incorporated Diodes Incorporated	поиск предложений	Diodes Incorporated	Diodes Incorporated	4000	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Transistors
ZTX455STZ ZTX455STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	140 V	160 V	5 V	0.7 V	100 MHz	1 W	- 55 C
ZTX457 ZTX457 Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	300 V	300 V	5 V	0.3 V	75 MHz	1 W	- 55 C	Diodes Incorporated	Single	0.5 A	50 at 10 mA, 10 V, 50 at 50 mA, 10 V, 25 at 100 mA, 10 V	50 at 10 mA, 10 V	4000	4.01 mm	4.77 mm	0.5 A	Through Hole	Bulk	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	ZTX457	Transistors	Si	453,600 mg	2.41 mm
ZTX458 ZTX458 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	400 V	400 V	5 V	0.5 V	50 MHz	1 W	- 55 C
ZTX458STZ ZTX458STZ Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	NPN	400 V	400 V	5 V	0.5 V	50 MHz	1 W	- 55 C
ZTX549 ZTX549 Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	TO-92-3	PNP	- 30 V	- 35 V	- 5 V	- 0.5 V	100 MHz	1 W	- 55 C