Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 160 V | 180 V | 6 V | 200 mV | 300 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 160 V | 180 V | 6 V | 200 mV | 300 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 30 at 50 mA, 5 V | 2500 | 1.6 mm | 4.6 mm | 600 mA | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DXT5551 | Transistors | Si | 52 mg | 2.6 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | PowerDI-5 | NPN | 160 V | 180 V | 6 V | 200 mV | 130 MHz | 700 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 60 V | 80 V | 5 V | 0.23 V | 200 MHz | 2 W | - 55 C | Diodes Incorporated | Single | 3 A | 100 | 300 | 2500 | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Transistors | Si | 52 mg | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | TO-252-3 | NPN | 180 V | 180 V | 7 V | 200 mV | 70 MHz | 3.9 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 60 V | 80 V | 5 V | 145 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 60 V | - 80 V | - 5 V | - 0.2 V | 145 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | PowerDI-5 | PNP | - 40 V | - 50 V | - 6 V | - 170 mV | 100 MHz | 3.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | PowerDI-5 | PNP | - 40 V | - 50 V | - 6 V | - 170 mV | 100 MHz | 3.2 W | - 55 C | Diodes Incorporated | Single | - 3 A | 300 | 800 | 5000 | - 6 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DXT790 | Transistors | Si | 96 mg | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 300 V | 300 V | 6 V | 500 mV | 50 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | - 300 V | - 300 V | - 5 V | - 500 mV | 50 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | NPN | 25 V | 35 V | 7 V | 180 mV | 240 MHz | 3.1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | NPN | 25 V | 35 V | 7 V | 180 mV | 240 MHz | 3.1 W | - 55 C | Diodes Incorporated | Single | 3 A | 100 | 300 | 2000 | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | Transistors | Si | 30 mg | ||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | NPN | 45 V | 45 V | 7 V | 140 mV | 150 MHz | 3.1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | NPN | 45 V | 45 V | 7 V | 140 mV | 150 MHz | 3.1 W | - 55 C | Diodes Incorporated | Single | 3 A | 400 | 2000 | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | Transistors | Si | 30 mg | |||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | NPN | 60 V | 80 V | 7 V | 200 mV | 175 MHz | 3.1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | NPN | 60 V | 80 V | 7 V | 200 mV | 175 MHz | 3.1 W | - 55 C | Diodes Incorporated | Single | 3 A | 100 | 300 | 2000 | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | Transistors | Si | 30 mg | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | PowerDI-5 | NPN | 100 V | 120 V | 7 V | 500 mV | 175 MHz | - 55 C | ||||||||||||||||||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 70 V | 150 V | 7 V | 150 mV | 220 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 70 V | 150 V | 7 V | 150 mV | 220 MHz | 2 W | - 55 C | Diodes Incorporated | Single | 120 | 500 at 100 mA, 2 V | 2500 | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DXTN26070 | Transistors | Si | 52 mg | ||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | NPN | 60 V | 60 V | 7 V | 270 mV | 140 MHz | 5 W | - 55 C | Diodes Incorporated | Single | 3 A | 2500 | 8 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | DXTN3C60 | Transistors | Si | ||||||||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 5000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
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поиск предложений
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+ 175 C | Diodes Incorporated | PowerDI3333-8 | PNP | - 25 V | - 35 V | - 7 V | - 164 mV | 160 MHz | 3.1 W | - 55 C |
