Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-563-6 | NPN | 40 V | 40 V | 5 V | 150 MHz | 600 mW | - 55 C | Diodes Incorporated | Single | 300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V, 75 at 2 A, 5 V | 300 at 1 mA, 5 V | 3000 | 0.6 mm | 1.6 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSS41 | Transistors | Si | 6 mg | 1.2 mm | ||||
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поиск предложений
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Diodes Incorporated | |||||||||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 60 V | 80 V | 5 V | 280 mV | 150 MHz | |||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 60 V | 80 V | 5 V | 280 mV | 150 MHz | 400 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-563-6 | NPN | 60 V | 80 V | 5 V | 250 mV | 150 MHz | 600 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-563-6 | NPN | 20 V | 20 V | 5 V | 260 MHz | 600 mW | - 55 C | Diodes Incorporated | Single | 120 | 220 at 1 mA, 2 V | 3000 | 0.6 mm | 1.6 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSS42 | Transistors | Si | 6 mg | 1.2 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 40 V | 40 V | 5 V | 320 mV | 100 MHz | 600 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | U-DFN2020-6 | NPN, PNP | - 60 V, 60 V | 60 V | 7 V | 175 MHz | 405 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 40 V | 40 V | 6 V | 355 mV | 70 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | U-DFN2020-6 | PNP | - 60 V | - 60 V | - 7 V | - 180 mV | 65 MHz | 405 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | U-DFN2020-6 | PNP | - 60 V | - 60 V | - 7 V | - 180 mV | 65 MHz | 405 mW | - 55 C | Diodes Incorporated | Dual | - 1 A | 170 at - 100 mA, - 2 V | 3000 | - 1.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | Transistors | Si | 76 mg | |||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | PNP | - 60 V | - 80 V | - 5 V | - 340 mV | 150 MHz | |||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | PNP | - 60 V | - 80 V | - 5 V | - 340 mV | 150 MHz | 725 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-563-6 | PNP | 60 V | 80 V | 5 V | 330 mV | 150 MHz | 600 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 10000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | DSS5220 | Transistors | Si | ||||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | DSS5220 | Transistors | Si | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | PNP | - 40 V | - 40 V | - 5 V | - 350 mV | 100 MHz | 600 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | PNP | - 40 V | - 40 V | - 5 V | 45 mV | 100 MHz | 730 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | PNP | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSS52 | Transistors | Si | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | 60 V | 100 V | 6 V | 350 mV | 100 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 60 V | 100 V | 6 V | 300 mV | 100 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 60 V | 100 V | 6 V | 300 mV | 100 MHz | 1200 mW | - 55 C | Diodes Incorporated | Single | 50 at 6 A, 2 V | 150 at 500 mA, 2 V | 2500 | 1.6 mm | 6.5 mm | 12 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSS60 | Transistors | Si | 112 mg | 3.5 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN | 100 V | 120 V | 5 V | 0.2 V | 100 MHz | 625 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 100 V | - 120 V | - 5 V | - 120 mV | 100 MHz | 625 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 100 V | - 120 V | - 5 V | - 120 mV | 100 MHz | 625 mW | - 55 C | Diodes Incorporated | Dual | - 1 A | 150 at - 500 mA at - 5 V | 450 at - 500 mA at - 5 V | 3000 | - 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSS9110 | Transistors | 7,500 mg |
