Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 45 V | 45 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX51 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 60 V | 60 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX52 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 60 V | 60 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX52 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | PNP | 80 V | 100 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX53 | Transistors | 130,500 mg | 2.48 mm | ||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 60 V | 60 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX55 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 60 V | 60 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX55 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 80 V | 100 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX56 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 80 V | 100 V | 5 V | 200 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 63 | 2500 | 1.5 mm | 4.5 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX56 | Transistors | Si | 52 mg | 2.48 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 20 V | 25 V | 5 V | 500 mV | 330 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 50 at 5 mA, 10 V | 2500 | 1.5 mm | 4.5 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DCX68 | Transistors | Si | 52 mg | 2.5 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 40 V | - 40 V | - 6 V | - 150 mV | 150 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 40 V | 40 V | 6 V | 300 mV | 105 MHz | 2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 40 V | 40 V | 6 V | 300 mV | 105 MHz | 2000 mW | - 55 C | Diodes Incorporated | Single | 2500 | 1.6 mm | 6.5 mm | 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DJT4031 | Transistors | Si | 112 mg | 3.5 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | PNP | - 60 V | - 60 V | - 5 V | 307 MHz | 1.28 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN | 40 V | 60 V | 6 V | 0.3 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN | 40 V | 60 V | 6 V | 300 MHz | 200 mW | - 65 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 40 V | - 40 V | - 5 V | - 0.4 V | 250 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | |||||||||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | PNP | - 150 V | - 160 V | - 5 V | - 500 mV | 300 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN | 160 V | 180 V | 6 V | 200 mV | 300 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN | 160 V | 180 V | 6 V | 200 mV | 300 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN1006H4-3 | NPN | 50 V | 60 V | 5 V | 250 mV | 60 MHz | 450 mW | - 55 C | Diodes Incorporated | Single | 100 mA | 120 | 10000 | 200 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DN0150 | Transistors | Si | |||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-963-6 | NPN | 50 V | 60 V | 5 V | 60 MHz | 300 mW | - 55 C | Diodes Incorporated | Dual | 200 | 200 at 2 mA, 6 V | 10000 | 0.45 mm | 1 mm | 0.1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DN0150 | Transistors | Si | 0.8 mm |
