История:
MCIMX6Q4AVT08ADR
MCIMX6D6AVT10AC
C8051F570-AMR
Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 350 V | 350 V | 5 V | 1 V | 50 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 60 V | 80 V | 5 V | 500 mV | 150 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 60 V | 80 V | 5 V | 500 mV | 150 MHz | 300 mW | - 55 C | Diodes Incorporated | Single | 30 at 2 A, 5 V | 3000 | 1 mm | 2.9 mm | 2 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DNBT8 | Transistors | Si | 8 mg | 1.3 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 20 V | 20 V | 5 V | 450 mV | 150 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 20 V | 20 V | 5 V | 450 mV | 150 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 150 at 6 A, 2 V | 500 at 100 mA, 2 V | 2500 | 1.6 mm | 6.5 mm | 8 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DNLS320 | Transistors | Si | 112 mg | 3.5 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | NPN | 50 V | 60 V | 6 V | 290 mV | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 50 V | 50 V | 5 V | 370 mV | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-89-3 | NPN | 50 V | 50 V | 5 V | 370 mV | 100 MHz | 1000 mW | - 55 C | Diodes Incorporated | Single | 2500 | 1.5 mm | 4.5 mm | 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DNLS350 | Transistors | Si | 52 mg | 2.5 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-963-6 | PNP | 50 V | 50 V | 5 V | 80 MHz | 300 mW | - 55 C | Diodes Incorporated | Dual | 120 | 120 at 2 mA, 6 V | 10000 | 0.45 mm | 1 mm | 0.1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DP0150 | Transistors | Si | 0.8 mm | |||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN1006H4-3 | PNP | - 50 V | - 50 V | - 5 V | - 300 mV | 80 MHz | 450 mW | - 55 C | Diodes Incorporated | Single | - 100 mA | 120 | 10000 | - 200 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DP0150 | Transistors | Si | 11,442 mg | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN3 | PNP | 50 V | 50 V | 5 V | 80 MHz | 450 mW | - 55 C | Diodes Incorporated | Single | 200 | 200 at 2 mA, 6 V | 3000 | 0.35 mm | 1 mm | 0.1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DP0150 | Transistors | Si | 2,400 g | 0.6 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | PNP | - 20 V | - 20 V | - 5 V | - 330 mV | 215 MHz | 600 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | PNP | - 20 V | - 20 V | - 5 V | - 330 mV | 215 MHz | 600 mW | - 55 C | Diodes Incorporated | Single | 3000 | 1.1 mm | 3 mm | - 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DPLS320 | Transistors | Si | 8 mg | 1.4 mm | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 50 V | - 60 V | - 6 V | - 300 mV | 100 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 140 V | - 180 V | - 7 V | - 360 mV | 150 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN | 80 V | 80 V | 4 V | 250 mV | 100 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | PNP | - 80 V | - 80 V | - 4 V | - 250 mV | 600 mW | - 65 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | PNP | - 80 V | - 80 V | - 4 V | - 250 mV | 600 mW | - 65 C | Diodes Incorporated | Dual | - 500 mA | 120 | 500 at - 10 mA, - 1 V | 3000 | 1.1 mm | 3 mm | - 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSM801 | Transistors | Si | 15 mg | 1.6 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | PNP | - 20 V | - 20 V | - 7 V | - 180 mV | 100 MHz | 1.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-3 | NPN | 20 V | 20 V | 6 V | 100 mV | 150 MHz | 600 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN1006-3 | NPN | 15 V | 15 V | 6 V | 250 mV | 250 MHz | 250 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN1006-3 | NPN | 40 V | 40 V | 6 V | 250 mV | 300 MHz | 250 mW | - 55 C | Diodes Incorporated | Single | 500 mA | 50 at 500 mA, 2 V | 10000 | 500 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | DSS25 | Transistors | Si | |||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-563-6 | NPN | 40 V | 40 V | 5 V | 150 MHz | 600 mW | - 55 C |
