Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 60 V | - 100 V | - 6 V | 120 MHz | 3 W | - 55 C | Diodes Incorporated | Single | 1000 | 1.65 mm | 6.7 mm | - 15 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | FZT951 | Transistors | Si | 112 mg | 3.7 mm | ||||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 1000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 100 V | - 140 V | - 7 V | - 420 mV | 125 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 100 V | - 140 V | - 7 V | - 420 mV | 125 MHz | 3 W | - 55 C | Diodes Incorporated | Single | 15 | 100 | 1000 | 1.65 mm | 6.7 mm | - 10 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | FZT953 | Transistors | Si | 110 mg | 3.7 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 140 V | - 180 V | - 7 V | - 370 mV | 110 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 140 V | - 180 V | - 7 V | - 370 mV | 110 MHz | 3 W | - 55 C | Diodes Incorporated | Single | - 4 A | 100 | 1000 | 1.65 mm | 6.7 mm | - 10 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | FZT955 | Transistors | Si | 110 mg | 3.7 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 200 V | - 220 V | - 7 V | - 275 mV | 110 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 200 V | - 220 V | - 7 V | - 275 mV | 110 MHz | 3 W | - 55 C | Diodes Incorporated | Single | - 2 A | 100 | 1000 | 1.65 mm | 6.7 mm | - 5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | FZT956 | Transistors | Si | 110 mg | 3.7 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 300 V | - 300 V | - 6 V | - 170 mV | 85 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 300 V | - 300 V | - 6 V | - 170 mV | 85 MHz | 3 W | - 55 C | Diodes Incorporated | Single | - 1 A | 90 at - 1 A, - 10 V | 300 at -500 mA, - 10 V | 1000 | 1.65 mm | 6.7 mm | - 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | FZT957 | Transistors | Si | 112 mg | 3.7 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 400 V | - 400 V | - 6 V | - 170 mV | 85 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223-4 | PNP | - 12 V | - 15 V | - 6 V | - 360 mV | 80 MHz | 3 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223 | NPN | 300 V | 300 V | 5 V | 50 MHz | 2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223 | PNP | - 300 V | - 300 V | - 5 V | 50 MHz | 2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-223 | PNP | - 300 V | - 300 V | - 5 V | 50 MHz | 2 W | - 55 C | Diodes Incorporated | Single | - 0.5 A | 25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 25 at 30 mA, 10 V | 25 | 1000 | 1.65 mm | 6.7 mm | 0.5 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | FZTA92 | Transistors | Si | 112 mg | 3.7 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN, PNP | - 60 V, 65 V | - 60 V, 80 V | - 5.5 V, 6 V | - 0.5 V | 100 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 125 C | Renesas / Intersil | SOIC-Narrow-16 | NPN, PNP | 8 V | 12 V | 5.5 V | 8000 MHz | 150 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 125 C | Toshiba | SM-6 | PNP | 50 V | 50 V | 5 V | 0.1 V | 80 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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Toshiba | ES6-6 | PNP | - 50 V | - 50 V | - 5 V | - 0.3 V | 80 MHz | 100 mW | |||||||||||||||||||||||
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поиск предложений
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+ 125 C | Toshiba | SM-6 | NPN, PNP | 50 V | 50 V | 5 V | 0.1 V | 80 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 125 C | Toshiba | SM-6 | NPN, PNP | 50 V | 50 V | 5 V | 0.1 V | 80 MHz | 300 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | ON Semiconductor | SC-74-6 | NPN, PNP | 50 V | 60 V | 7 V | - 0.15 V | 380 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 125 C | Toshiba | SOT-363-6 | NPN, PNP | 50 V | 60 V, - 50 V | 5 V | 100 mV | 150 MHz, 120 MHz | 200 mW | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Toshiba | SOT-563-6 | NPN, PNP | 50 V | 60 V, - 50 V | 5 V | 100 mV | 80 MHz, 80 MHz | 100 mW | ||||||||||||||||||||||
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поиск предложений
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+ 125 C | Toshiba | SOT-363-6 | NPN, PNP | 50 V | 60 V, - 50 V | 5 V | 0.1 V | 150 MHz, 120 MHz | 200 mW |
