Главная Каталог Полупроводниковые приборы Транзисторы Bipolar Transistors - BJT

Bipolar Transistors - BJT

Товар	Цена	Maximum Operating Temperature	Manufacturer	Package/Case	Transistor Polarity	Collector- Emitter Voltage VCEO Max	Collector- Base Voltage VCBO	Emitter- Base Voltage VEBO	Collector-Emitter Saturation Voltage	Gain Bandwidth Product fT	Pd - Power Dissipation	Minimum Operating Temperature	Brand	Configuration	DC Collector/Base Gain hFE Min	Factory Pack Quantity	Height	Length	Maximum DC Collector Current	Mounting Style	Packaging	Product Category	Product Type	RoHS	Series	Subcategory	Technology	Unit Weight	Width
HN1C01F-GR(TE85L,F HN1C01F-GR(TE85L,F Toshiba	поиск предложений		Toshiba	SOT-26-6	NPN	50 V	60 V	5 V	0.1 V	80 MHz	300 mW
HN1C01FE-GR,LF HN1C01FE-GR,LF Toshiba	поиск предложений		Toshiba
HN1C01FE-Y,LF HN1C01FE-Y,LF Toshiba	поиск предложений	+ 150 C	Toshiba		NPN	50 V	60 V	5 V	100 mV	80 MHz	100 mW	- 55 C
HN1C01FU-GR,LF HN1C01FU-GR,LF Toshiba	поиск предложений	+ 125 C	Toshiba	SOT-363-6	NPN	50 V	60 V	5 V	100 mV	80 MHz	200 mW
HN1C01FYTE85LF HN1C01FYTE85LF Toshiba	поиск предложений		Toshiba	SOT-26-6	NPN	50 V	60 V	5 V	0.1 V	80 MHz	300 mW
HN1C03FU-B(TE85L,F HN1C03FU-B(TE85L,F Toshiba	поиск предложений	+ 150 C	Toshiba	US-6	NPN	20 V	50 V	25 V	42 mV	30 MHz	200 mW	- 55 C
HN1C03FU-B,LF HN1C03FU-B,LF Toshiba	поиск предложений	+ 150 C	Toshiba	US-6	NPN	20 V	50 V	25 V	0.042 V	30 MHz	200 mW	- 55 C
HN2A01FU-GR(TE85LF HN2A01FU-GR(TE85LF Toshiba	поиск предложений		Toshiba	SOT-363-6	PNP	- 50 V	- 50 V	- 5 V	- 0.1 V	80 MHz	200 mW
HN4A06J(TE85L,F) HN4A06J(TE85L,F) Toshiba	поиск предложений		Toshiba	SOT-25-5	PNP	- 120 V	- 120 V	- 5 V	- 0.3 V	100 MHz	300 mW
HN4A51JTE85LF HN4A51JTE85LF Toshiba	поиск предложений		Toshiba	SOT-25-5	PNP	- 120 V	- 120 V	- 5 V	- 0.3 V	100 MHz	300 mW
HN4A56JU(TE85L,F) HN4A56JU(TE85L,F) Toshiba	поиск предложений		Toshiba
HN4C06J-BL(TE85L,F) HN4C06J-BL(TE85L,F) Toshiba	поиск предложений		Toshiba
HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba	поиск предложений		Toshiba	SOT-25-5	NPN	120 V	120 V	5 V	0.3 V	100 MHz	300 mW
IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 Infineon Technologies	поиск предложений	+ 150 C	Infineon Technologies	LSON-8	NPN		600 V				62.5 W	- 55 C
IGT40R070D1E8220ATMA1 IGT40R070D1E8220ATMA1 Infineon Technologies	поиск предложений	+ 150 C	Infineon Technologies	HSOF-8	NPN		400 V				125 W	0 C
IMH20TR1G IMH20TR1G ON Semiconductor	поиск предложений		ON Semiconductor	SC-74R-6	NPN	15 V	30 V	5 V	80 mV		300 mW
IMT1AT110 IMT1AT110 ROHM Semiconductor	поиск предложений	+ 150 C	ROHM Semiconductor		PNP	- 50 V	- 60 V	- 6 V		140 MHz	300 mW
IMX1T110 IMX1T110 ROHM Semiconductor	поиск предложений	+ 150 C	ROHM Semiconductor		NPN	50 V	60 V	7 V		180 MHz	300 mW	- 55 C
IMX25T110 IMX25T110 ROHM Semiconductor	поиск предложений	+ 150 C	ROHM Semiconductor	SMT-6	NPN	20 V	50 V	25 V	50 mV	35 MHz	300 mW	- 55 C
IMX8-7-F IMX8-7-F Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	SOT-26-6	NPN	120 V	120 V	5 V		140 MHz	300 mW	- 55 C
IMX8-7-F IMX8-7-F Diodes Incorporated Diodes Incorporated	поиск предложений	+ 150 C	Diodes Incorporated	SOT-26-6	NPN	120 V	120 V	5 V		140 MHz	300 mW	- 55 C	Diodes Incorporated	Dual	180	3000	1.1 mm	3 mm	0.05 A	SMD/SMT	Reel	Bipolar Transistors - BJT	BJTs - Bipolar Transistors	Details	IMX8	Transistors	Si	15 mg	1.6 mm
IMZ1AT108 IMZ1AT108 ROHM Semiconductor	поиск предложений	+ 150 C	ROHM Semiconductor		NPN, PNP	50 V	60 V	- 6 V, 7 V		140 MHz, 180 MHz	300 mW	- 55 C
Jantx2N4854 Jantx2N4854 Microchip / Microsemi	поиск предложений	+ 200 C	Microchip / Microsemi	TO-78-6	NPN, PNP	40 V	60 V	5 V	0.4 V		2 W	- 65 C
KSA1010YTU KSA1010YTU ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-220-3	PNP	- 100 V	- 100 V	- 7 V	- 0.6 V		40 W	- 55 C
KSA1013YBU KSA1013YBU ON Semiconductor / Fairchild	поиск предложений	+ 150 C	ON Semiconductor / Fairchild	TO-92-3	PNP	- 160 V	- 160 V	- 6 V	- 1.5 V	50 MHz	900 mW	- 55 C