JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 40 V | Dual | Si | |||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 40 V | Dual | Si | |||||||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 25 V | - 4 V | 30 mA | 1 nA | 500 mW (1/2 W) | 2,131 g | Dual | 10 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 25 V | - 6 V | 60 mA | 1 nA | 500 mW (1/2 W) | 2,176 g | Dual | 10 mS | Through Hole | Si | ||||||
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поиск предложений
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UnitedSiC | N-Channel | 650 V | 20 V | 85 A | 441 W | 25 mOhms | - 55 C | + 175 C | 9,594 g | Single | Through Hole | SiC | ||||||
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поиск предложений
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UnitedSiC | N-Channel | 650 V | 20 V | 32 A | 190 W | 80 mOhms | - 55 C | + 175 C | 15,489 g | Single | Through Hole | SiC | ||||||
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поиск предложений
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UnitedSiC | N-Channel | 1200 V | 20 V | 63 A | 429 W | 35 mOhms | - 55 C | + 175 C | 13,633 g | Single | Through Hole | SiC | ||||||
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поиск предложений
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UnitedSiC | N-Channel | 1200 V | - 20 V to 3 V | 5 uA | 34 A | 254 W | 90 mOhms | - 55 C | + 175 C | Single | Through Hole | SiC | ||||||
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поиск предложений
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UnitedSiC | N-Channel | 1200 V | 20 V | 33.5 A | 254 W | 70 mOhms | - 55 C | + 175 C | 11 g | Single | Through Hole | SiC | ||||||
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поиск предложений
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InterFET | N-Channel | 300 mW | 5,844 g | Single | Si | |||||||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | 15 V | 3.5 V | 300 mW | 60 Ohms | 3,257 g | Single | Through Hole | Si | ||||||||
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поиск предложений
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InterFET | P-Channel | 15 V | 300 mW | Single | Si | |||||||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | 15 V | 7 V | 300 mW | 600 Ohms | 1,884 g | Single | Through Hole | Si | ||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | 15 V | 5 V | 300 mW | 8 kOhms | 415,759 mg | Single | Through Hole | Si |
