История:
TT120N16SOFHPSA1
EFD30/15/9-3C90
BT131-800D,112
SR1206FR-7T1KL
RM5/ILP-3F36-A100
EQ30-3F4-A250
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BTA2008-600E/L02EP
MLS0603-4S7-300
EQ20/R-3C96
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1-2191595-3
APT2X31DQ120J
AUIRG4BC30U-S
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KWant250-1C12SDN
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DS2.5-3L-L/L/PE
ZXT13N20DE6TA
M8A03Z-MMSRA-SP001B
BT136-600E,127
ACS108-8TN-TR
HGTG10N120BND
SR1206JR-071KL
MLH0805-82N-5
BTA2008-800E,412
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FGH20N60SFDTU-F085
Нет в наличии
Артикул:
Описание:
FGH20N60SFDTU-F085
Характеристики
Manufacturer
ON Semiconductor
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
165 W
Описание
Insulated-gate bipolar transistor-FGH20N60SFDTU-F085: Биполярный транзистор с изолированным затвором
IGBT-транзистор FGH20N60SFDTU-F085 в каталоге Components.by

