Главная
Каталог
Полупроводниковые приборы
Дискретные полупроводниковые приборы
Дискретные модули и модули питания
Диодные модули
Диодные модули
| Товар | Цена | Brand | Configuration | Fall Time | Id - Continuous Drain Current | Manufacturer | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Style | Package/Case | Pd - Power Dissipation | Product | Product Category | Rds On - Drain-Source Resistance | Rise Time | RoHS | Series | Technology | Transistor Polarity | Type | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Vds - Drain-Source Breakdown Voltage | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Vr - Reverse Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
поиск предложений
|
IXYS | Single | 68 A | IXYS | + 150 C | - 40 C | Chassis Mount | SOT-227-4 | - | Discrete Semiconductor Modules | 25 mOhms | Details | SiC | N-Channel | 1.2 kV | - 20 V, + 20 V | 2 V | ||||||||||
|
|
поиск предложений
|
IXYS | Single | 12 ns | 70 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 890 W | Discrete Semiconductor Modules | 80 mOhms | 25 ns | Details | IXFN70N60 | Si | N-Channel | 60 ns | 26 ns | 600 V | - 30 V, + 30 V | ||||||
|
|
поиск предложений
|
IXYS | Single | 50 ns | 73 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 520 W | Discrete Semiconductor Modules | 45 mOhms | 80 ns | Details | HiPerFET | Si | N-Channel | 100 ns | 30 ns | 300 V | - 20 V, + 20 V | ||||||
|
|
поиск предложений
|
IXYS | Single | 12 ns | 73 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 500 W | Discrete Semiconductor Modules | 45 mOhms | 36 ns | Details | HiPerFET | Si | N-Channel | 82 ns | 37 ns | 300 V | - 30 V, + 30 V | ||||||
|
|
поиск предложений
|
IXYS | Single | 27 ns | 80 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 780 W | Discrete Semiconductor Modules | 55 mOhms | 70 ns | Details | HiPerFET | Si | N-Channel | 102 ns | 61 ns | 500 V | - 20 V, + 20 V | ||||||
|
|
поиск предложений
|
Подробности | ||||||||||||||||||||||||||
|
|
поиск предложений
|
IXYS | Single | 11 ns | 80 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 890 W | Discrete Semiconductor Modules | 60 mOhms | 25 ns | Details | HiPerFET | Si | N-Channel | 60 ns | 29 ns | 500 V | - 30 V, + 30 V | ||||||
|
|
поиск предложений
|
IXYS | Single | 24 ns | 72 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 1.04 kW | Discrete Semiconductor Modules | 75 mOhms | 23 ns | Details | IXFN82N60 | Si | N-Channel | Polar HiPerFET Power MOSFET | 79 ns | 28 ns | 600 V | - 30 V, + 30 V | 5 V | ||||
|
|
поиск предложений
|
IXYS | Single | 66 A | IXYS | Chassis Mount | SOT-227-4 | 960 W | Discrete Semiconductor Modules | 75 mOhms | 300 ns | Details | IXFN82N60 | Si | N-Channel | 600 V | - 30 V, + 30 V | |||||||||||
|
|
поиск предложений
|
IXYS | Single | 40 ns | 90 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 560 W | Discrete Semiconductor Modules | 33 mOhms | 55 ns | Details | IXFN90N30 | Si | N-Channel | HiPerFET Power MOSFET | 100 ns | 42 ns | 300 V | - 20 V, + 20 V | 4 V | ||||
|
|
поиск предложений
|
IXYS | Single | 8 ns | 90 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 1.2 kW | Discrete Semiconductor Modules | 41 mOhms | 20 ns | Details | X-Class | Si | N-Channel | 126 ns | 50 ns | 850 V | - 30 V, + 30 V | 3.5 V | |||||
|
|
поиск предложений
|
IXYS | Single | 11 ns | 68 A | IXYS | + 150 C | - 55 C | Screw Mount | SOT-227B-4 | 780 W | Power MOSFET Modules | Discrete Semiconductor Modules | 55 mOhms | 34 ns | Details | Si | N-Channel | MOSFET | 67 ns | 15 ns | 500 V | 30 V | 3 V | ||||
|
|
поиск предложений
|
IXYS | Single | 10 ns | 44 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | Discrete Semiconductor Modules | 63 mOhms | 15 ns | Details | IXKN45N80 | Si | N-Channel | CoolMOS Power MOSFET | 75 ns | 25 ns | 800 V | - 20 V, + 20 V | 3.9 V | |||||
|
|
поиск предложений
|
IXYS | Single | 10 ns | 75 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | Discrete Semiconductor Modules | 30 mOhms | 30 ns | Details | IXKN75N60 | Si | N-Channel | CoolMOS Power MOSFET | 110 ns | 20 ns | 600 V | - 20 V, + 20 V | 3.9 V | |||||
|
|
поиск предложений
|
IXYS | Single | 83 ns | 15 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 540 W | Discrete Semiconductor Modules | 900 mOhms | 31 ns | Details | IXTN17N120 | Si | N-Channel | Linear Power MOSFET | 110 ns | 42 ns | 1.2 kV | - 30 V, + 30 V | 6 V | ||||
|
|
поиск предложений
|
IXYS | Single | 78 ns | 30 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 800 W | Discrete Semiconductor Modules | 450 mOhms | 70 ns | Details | IXTN30N100 | Si | N-Channel | 100 ns | 36 ns | 1 kV | - 30 V, + 30 V | ||||||
|
|
поиск предложений
|
IXYS | Single | 8 ns | 400 A | IXYS | + 175 C | - 55 C | Chassis Mount | SOT-227-4 | 830 W | Discrete Semiconductor Modules | 2.7 mOhms | 22 ns | Details | X4-Class | Si | N-Channel | 180 ns | 40 ns | 150 V | - 20 V, + 20 V | 4.5 V | |||||
|
|
поиск предложений
|
Подробности | ||||||||||||||||||||||||||
|
|
поиск предложений
|
IXYS | 44 A | IXYS | Chassis Mount | SOT-227-4 | Discrete Semiconductor Modules | Details | IXTN44N50 | Si | 500 V | |||||||||||||||||
|
|
поиск предложений
|
IXYS | Single | 42 ns | 46 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 700 W | Discrete Semiconductor Modules | 160 mOhms | 50 ns | Details | IXTN46N50 | Si | N-Channel | 80 ns | 40 ns | 500 V | - 30 V, + 30 V | ||||||
|
|
поиск предложений
|
Подробности | ||||||||||||||||||||||||||
|
|
поиск предложений
|
IXYS | Single | 38 ns | 53 A | IXYS | + 150 C | - 55 C | Chassis Mount | SOT-227-4 | 735 W | Discrete Semiconductor Modules | 100 mOhms | 40 ns | Details | IXTN60N50 | Si | N-Channel | Linear Power MOSFET | 165 ns | 40 ns | 500 V | - 30 V, + 30 V | 2.5 V | ||||
|
|
поиск предложений
|
Подробности | ||||||||||||||||||||||||||
|
|
поиск предложений
|
Подробности | ||||||||||||||||||||||||||
|
|
поиск предложений
|
IXYS | Single | 28 ns | 48 A | IXYS | + 175 C | - 55 C | Through Hole | TO-220AB-3 | 250 W | Power MOSFET Modules | Discrete Semiconductor Modules | 50 mOhms | 26 ns | Details | N-Channel | Trench | 46 ns | 20 ns | 200 V | 20 V | 2.5 V |
