JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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Microchip | Through Hole | Si | ||||||||||||||||
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Microchip | Through Hole | Si | |||||||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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Microchip | Through Hole | Si | |||||||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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Microchip | Si | ||||||||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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Microchip | Through Hole | Si | |||||||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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Microchip | P-Channel | 30 V | 30 V | 6 V | - 60 mA | -1 nA | 30 V | 0.5 W | 100 Ohms | - 65 C | + 200 C | Single | Through Hole | Si | ||||
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Microchip | 1,603 g | Through Hole | Si | ||||||||||||||
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ON Semiconductor | N-Channel | 43,816 mg | Si | |||||||||||||||
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ON Semiconductor | N-Channel | 15 V | - 15 V | - 700 mV | 32 mA | 50 mA | - 15 V | 200 mW | - 55 C | + 150 C | 11,600 mg | Single | 24 mS | SMD/SMT | Si | |||
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ON Semiconductor | N-Channel | 25 V | 50 mA | 400 mW | - 55 C | + 150 C | - 55 C to + 150 C | Single | SMD/SMT | Si | ||||||||
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ON Semiconductor | N-Channel | 15 V | - 15 V | - 0.7 V | 32 mA | 50 mA | 300 mW | - 55 C | + 150 C | Dual | 24 mS | SMD/SMT | Si | |||||
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ON Semiconductor | N-Channel | 25 V | - 25 V | - 1.2 V | 40 mA | 4.5 A | 25 V | 400 mW | 78 mOhms | - 55 C | + 150 C | 40 mg | Dual | 40 mS | SMD/SMT | Si | ||
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InterFET | P-Channel | - 15 V | 30 V | 10 V | - 10 mA | - 6 mA | 360 mW | 75 Ohms | 779,167 mg | Single | Through Hole | Si | ||||||
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InterFET | P-Channel | - 15 V | 30 V | 10 V | - 10 mA | - 6 mA | 360 mW | 75 Ohms | Single | Through Hole | Si | |||||||
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InterFET | P-Channel | - 15 V | 30 V | 5 V | - 5 mA | - 3 mA | 360 mW | 150 Ohms | 369,800 mg | Single | Through Hole | Si | ||||||
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InterFET | P-Channel | - 15 V | 30 V | 5 V | - 5 mA | - 3 mA | 360 mW | 150 Ohms | Single | Through Hole | Si | |||||||
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NXP | N-Channel | 25 V | - 25 V | - 6.5 V | 60 mA | 10 mA | - 25 V | 250 mW | 50 Ohms | - 65 C | + 150 C | 8 mg | Single | 10 mS | SMD/SMT | Si |
