JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
поиск предложений
|
ON Semiconductor | N-Channel | - 35 V | - 5 V | 4 mA to 20 mA | 350 mW | 50 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | SMD/SMT | Si | |||||
|
|
поиск предложений
|
ON Semiconductor | N-Channel | - 35 V | - 3 V | 10 mA to 40 mA | 350 mW | 100 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 31 mg | Single | SMD/SMT | Si | |||||
|
|
поиск предложений
|
ON Semiconductor | P-Channel | 30 V | 7 mA to 60 mA | 8 mg | Single | SMD/SMT | Si | |||||||||||
|
|
поиск предложений
|
ON Semiconductor | P-Channel | 30 V | 4 V | 30 mA | 225 mW | 250 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | SMD/SMT | Si | |||||
|
|
поиск предложений
|
|||||||||||||||||||
|
|
поиск предложений
|
|||||||||||||||||||
|
|
поиск предложений
|
ON Semiconductor | N-Channel | - 40 V | - 4 V | 4.5 mA | 350 mW | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | SMD/SMT | Si | ||||||
|
|
поиск предложений
|
|||||||||||||||||||
|
|
поиск предложений
|
ON Semiconductor | N-Channel | 25 V | 25 V | 12 mA to 30 mA | 40 mg | Single | SMD/SMT | Si | ||||||||||
|
|
поиск предложений
|
ON Semiconductor | N-Channel | 25 V | 25 V | 24 mA to 60 mA | 40 mg | Single | SMD/SMT | Si | ||||||||||
|
|
поиск предложений
|
ON Semiconductor | N-Channel | 25 V | 25 V | 24 mA to 60 mA | 40 mg | Single | SMD/SMT | Si | ||||||||||
|
|
поиск предложений
|
ON Semiconductor | N-Channel | 25 V | 25 V | 24 mA to 60 mA | 40 mg | Single | SMD/SMT | Si | ||||||||||
|
|
|
поиск предложений
|
Microchip | Si | ||||||||||||||||
|
|
поиск предложений
|
Microchip | N-Channel | 40 V | - 40 V | 30 mA | - 0.1 nA | 40 V | 0.36 W | 30 Ohms | - 65 C | + 175 C | Single | Through Hole | Si | |||||
|
|
поиск предложений
|
Microchip | N-Channel | 40 V | - 40 V | 15 mA | - 0.1 nA | 40 V | 0.36 W | 50 Ohms | - 65 C | + 175 C | Single | Through Hole | Si | |||||
|
|
поиск предложений
|
|||||||||||||||||||
|
|
поиск предложений
|
Microchip | N-Channel | 40 V | - 40 V | 8 mA | - 0.1 nA | 40 V | 0.36 W | 80 Ohms | - 65 C | + 175 C | Single | Through Hole | Si | |||||
|
|
поиск предложений
|
Microchip | N-Channel | 40 V | - 40 V | 8 mA | - 0.1 nA | 40 V | 0.36 W | 80 Ohms | - 65 C | + 175 C | Single | Through Hole | Si | |||||
|
|
|
поиск предложений
|
Microchip | Through Hole | Si | |||||||||||||||
|
|
|
поиск предложений
|
||||||||||||||||||
|
|
|
поиск предложений
|
Microchip | Through Hole | Si | |||||||||||||||
|
|
|
поиск предложений
|
Microchip | Through Hole | Si | |||||||||||||||
|
|
|
поиск предложений
|
Microchip | Through Hole | Si | |||||||||||||||
|
|
|
поиск предложений
|
Microchip | Through Hole | Si | |||||||||||||||
|
|
поиск предложений
|
Microchip | Through Hole | Si |
