JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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ON Semiconductor | N-Channel | - 25 V | - 6 V | 1 mA to 5 mA | 625 mW | 12 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 201 mg | Single | Through Hole | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 25 V | - 6 V | 40 mA | 625 mW | 12 Ohms | 201 mg | Single | Through Hole | Si | ||||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 4 V | 10 mA | 1 uA | 360 mW | 18 Ohms | 454 mg | Single | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | - 25 V | - 4 V | 10 mA | 360 mW | 25 Ohms | Single | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | - 35 V | - 10 V | 20 mA | 360 mW | 30 Ohms | Single | Through Hole | Si | |||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 10 V | 20 mA | 625 mW | 30 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 201 mg | Single | Through Hole | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | 20 mA | 201 mg | Single | Through Hole | Si | |||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | 20 mA | 201 mg | Single | Through Hole | Si | |||||||||||
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поиск предложений
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InterFET | N-Channel | - 35 V | - 5 V | 5 mA | 360 mW | 50 Ohms | Single | Through Hole | Si | |||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 5 V | 5 mA | 625 mW | 50 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 201 mg | Single | Through Hole | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 5 V | 5 mA | 625 mW | 50 Ohms | 201 mg | Single | Through Hole | Si | ||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 5 V | 5 mA | 625 mW | 50 Ohms | 201 mg | Single | Through Hole | Si | ||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 5 V | 5 mA | 625 mW | 50 Ohms | 201 mg | Single | Through Hole | Si | ||||||||
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поиск предложений
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 3 V | 2 mA to 9 mA | 625 mW | 100 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 201 mg | Single | Through Hole | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | 201 mg | Single | Through Hole | Si | ||||||||||||
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поиск предложений
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InterFET | P-Channel | - 15 V | 30 V | 10 V | - 125 mA | - 10 nA | 360 mW | 85 Ohms | 453,600 mg | Single | Through Hole | Si | ||||||
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поиск предложений
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поиск предложений
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ON Semiconductor | P-Channel | 30 V | 6 V | - 7 mA to - 60 mA | 350 mW | 125 Ohms | 55 mg | Single | Through Hole | Si | ||||||||
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поиск предложений
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InterFET | P-Channel | - 15 V | 30 V | 4 V | - 35 mA | - 10 nA | 360 mW | 250 Ohms | 453,600 mg | Single | Through Hole | Si | ||||||
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поиск предложений
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ON Semiconductor | P-Channel | 30 V | 55 mg | Single | Through Hole | Si | ||||||||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 40 V | - 1.5 V | 1 mA | 10 nA | 360 mW | 453,600 mg | Single | 500 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 10 V | 20 mA | 360 mW | Single | 1500 uS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 25 V | - 2 V | 3 mA | 10 nA | 360 mW | 453,600 mg | Single | 500 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 4.5 V | 20 mA | 1 nA | 360 mW | 453,600 mg | Single | 6000 uS | Through Hole | Si |
