JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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InterFET | N-Channel | - 50 V | - 10 C | 150 mA | Single | Through Hole | Si | |||||||||||
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InterFET | N-Channel | 10 V | - 40 V | - 1.2 V | 30 mA | 1 uA | 375 mW | 400 mg | Dual | 40 mS | Through Hole | Si | ||||||
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InterFET | N-Channel | 10 V | - 20 V | - 2 V | 20 mA | Single | 30 mS | Through Hole | Si | |||||||||
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InterFET | N-Channel | Si | ||||||||||||||||
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InterFET | N-Channel | Si | ||||||||||||||||
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InterFET | N-Channel | Si | ||||||||||||||||
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InterFET | P-Channel | - 10 V | 25 V | 9.5 V | - 10 mA | - 1 uA | 300 mW | Single | 6 mS | Through Hole | Si | |||||||
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InterFET | P-Channel | 25 V | 5.5 V | - 2 mA | - 10 mA | 300 mW | 300 Ohms | - 55 C | + 125 C | Single | 4 mS | Through Hole | Si | |||||
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InterFET | N-Channel | 15 V | - 50 V | - 2.5 V | 10 mA | 200 uA | 300 mW | Dual | 0.5 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 50 V | - 2.5 V | 10 mA | 200 uA | 300 mW | Dual | 0.5 mS | Through Hole | Si | |||||||
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InterFET | N-Channel | 15 V | - 50 V | - 2.5 V | 10 mA | 200 uA | 300 mW | Dual | 0.5 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 50 V | - 2.5 V | 10 mA | 200 uA | 300 mW | 2,384 g | Dual | 0.5 mS | Through Hole | Si | ||||||
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InterFET | N-Channel | 20 V | - 40 V | - 3.5 V | 5 mA | 200 uA | 375 mW | Dual | 0.6 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 3.5 V | 5 mA | 375 mW | - 55 C | + 125 C | Dual | 1 mS | Through Hole | Si | |||||||
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InterFET | N-Channel | - 40 V | - 2 V | 1000 uA | 750 mW | Dual | 100 uS | Through Hole | Si | |||||||||
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InterFET | N-Channel | 10 V | - 60 V | - 2 V | 1 mA | 30 uA | 400 mW | Dual | 100 uS | Through Hole | Si | |||||||
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InterFET | N-Channel | - 40 V | - 3 V | 1800 uA | 750 mW | Dual | 100 uS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 3 V | 1800 uA | 750 mW | Dual | 100 uS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | P-Channel | - 15 V | 30 V | 10 V | - 90 mA | - 15 mA | 500 mW (1/2 W) | 75 Ohms | Single | Through Hole | Si |
