JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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InterFET | P-Channel | - 15 V | 30 V | 6 V | - 60 mA | - 15 mA | 500 mW (1/2 W) | 100 Ohms | Single | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 50 V | - 4 V | 7 mA | - 200 uA | 250 mW | Dual | 1 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 50 V | - 4 V | 7 mA | - 200 uA | 250 mW | Dual | 1 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 50 V | - 4 V | 7 mA | - 200 uA | 250 mW | Dual | 1 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 10 V | 150 mA | 10 mA | 300 mW | 5 Ohms | Single | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 9 V | 100 mA | 10 mA | 300 mW | 7 Ohms | Single | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 4 V | 30 mA | 10 mA | 300 mW | 10 Ohms | 1,430 g | Single | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 3 V | 30 mA | 650 mW | 100 Ohms | 5,030 g | Dual | 7000 uhmo | Through Hole | Si | |||||||
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поиск предложений
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поиск предложений
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InterFET | N-Channel | - 40 V | - 3 V | 30 mA | 650 mW | 100 Ohms | 2,163 g | Dual | 7000 uhmo | Through Hole | Si | |||||||
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поиск предложений
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поиск предложений
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InterFET | N-Channel | 10 V | - 25 V | - 5 V | 40 mA | 5 mA | 500 mW (1/2 W) | Dual | 3000 uS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | - 100 V | - 15 V | 10 mA | 800 mW | 3,576 g | Single | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | - 100 V | - 15 V | 10 mA | 800 mW | Single | Through Hole | Si | ||||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 3 V | 10 mA | 100 uA | 400 mW | 4,885 g | Dual | 25 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 3.3 V | - 15 V | - 900 mV | 1 mA | 1 uA | 250 mW | 3 kOhms | 20 mg | Single | 600 uS | SMD/SMT | Si | |||||
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поиск предложений
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поиск предложений
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InterFET | N-Channel | - 50 V | - 0.5 V to -2.5 V | 10 mA | 300 mW | - 55 C | + 125 C | Dual | 2 mS | Through Hole | Si | |||||||
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поиск предложений
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 10 V | 80 mA | 1 uA | 360 mW | 8 Ohms | 453,600 mg | Single | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | - 25 V | - 6 V | 40 mA | 360 mW | 12 Ohms | Single | Through Hole | Si |
