JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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InterFET | N-Channel | 3,576 g | Si | |||||||||||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 5 V | 6 mA | 360 mW | 1,720 g | Single | 1500 uS | Through Hole | Si | ||||||||
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поиск предложений
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InterFET | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 40 V | - 6 V | 10 mA | 1 uA | 360 mW | Single | 2500 uS | Through Hole | Si | |||||||
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поиск предложений
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поиск предложений
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InterFET | P-Channel | - 10 V | - 30 V | 4.5 V | - 50 mA | 5 mA | 360 mW | 453,600 mg | Single | 8 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 30 V | - 6 V | 15 mA | 1 nA | 360 mW | 453,600 mg | Single | 4500 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 30 V | - 3 V | 8 mA | 1 nA | 360 mW | 453,600 mg | Single | 3000 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 25 V | - 4 V | 30 mA | 1 nA | 360 mW | 453,600 mg | Single | 10000 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 25 V | - 6.5 V | 60 mA | 1 nA | 360 mW | 453,600 mg | Single | 8000 uS | Through Hole | Si | ||||||
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поиск предложений
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ON Semiconductor | N-Channel | 15 V | 50 mA | 300 mW | 7,440 mg | Si | ||||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 15 V | 50 mA | 300 mW | 7,440 mg | Si | ||||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 7,700 mg | Dual | Si | ||||||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 40 V | - 5 V | 15 mA to 40 mA | 350 mW | 80 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | SMD/SMT | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 40 V | - 1.8 V | 2 mA to 9 mA | 225 mW | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | 0.00007 S to 0.00021 S | SMD/SMT | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | 30 V | 30 V | 50 mA to 150 mA | 8 mg | Single | SMD/SMT | Si | ||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 30 V | 30 V | 25 mA to 75 mA | 8 mg | Single | SMD/SMT | Si | ||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 30 V | 30 V | 5 mA to 30 mA | 8 mg | Single | SMD/SMT | Si | ||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 30 V | 30 V | - 3 V | 5 mA to 30 mA | 225 mW | 8 mg | Single | SMD/SMT | Si | ||||||||
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поиск предложений
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поиск предложений
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ON Semiconductor | N-Channel | - 40 V | - 2.7 V | 2 mA to 15 mA | 350 mW | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | 0.0075 S to 0.015 S | SMD/SMT | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 25 V | - 6 V | 2 mA to 6.5 mA | 350 mW | - 55 C | + 150 C | - 55 C to + 150 C | 40 mg | Single | 0.001 S to 0.005 S | SMD/SMT | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 25 V | - 10 V | 10 mA | 350 mW | 8 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 40 mg | Single | SMD/SMT | Si | |||||
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поиск предложений
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ON Semiconductor | N-Channel | - 25 V | - 25 V | 10 mA | 460 mW | 18 Ohms | - 55 C | + 150 C | 40 mg | Single | SMD/SMT | Si | ||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 35 V | - 10 V | 5 mA | 350 mW | 30 Ohms | - 55 C | + 150 C | - 55 C to + 150 C | 8 mg | Single | SMD/SMT | Si |
