JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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поиск предложений
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ON Semiconductor | N-Channel | 25 V | 50 mA | 400 mW | 14,400 mg | Si | ||||||||||||
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поиск предложений
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GeneSiC Semiconductor | N-Channel | 1200 V | 45 A | 282 W | 50 mO | - 55 C | + 175 C | 1,450 g | SMD/SMT | SiC | ||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 1.5 V | 20 mA | 500 pA | 225 mW | 8 mg | Single | 15 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 1.5 V | 20 mA | 500 pA | 225 mW | 8 mg | Single | 15 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 1.5 V | 25 mA | 1 uA | 480 mW | + 150 C | 540 mg | Dual | 0.01 mS | SMD/SMT | Si | |||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 1.5 V | 25 mA | 1 uA | 480 mW | 540 mg | Dual | 0.01 mS | SMD/SMT | Si | ||||||
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InterFET | N-Channel | Dual | Si | |||||||||||||||
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поиск предложений
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InterFET | N-Channel | - 20 V | - 1.5 V | 20 mA | 225 mW | Single | 10 mS | SMD/SMT | Si | |||||||||
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InterFET | N-Channel | 15 V | - 20 V | - 6 V | 15 mA | 50 uA | 375 mW | Single | 4.5 mS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 25 V | - 6 V | 15 mA | 5 nA | 375 mW | 8 mg | Single | 3.5 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 2 V | 30 mA | 500 pA | 300 mW | 1 g | Single | 750 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 3 V | 30 mA | 500 pA | 300 mW | 1 g | Dual | 750 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 20 V | - 1.5 V | 5 mA | 500 pA | 225 mW | 8 mg | Single | 15 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 20 V | - 1.5 V | 5 mA | 500 pA | 225 mW | 8 mg | Single | 15 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | - 20 V | - 1.5 V | 5 mA | 300 mW | Single | 15 mS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 20 V | - 1.5 V | 5 mA | 500 pA | 300 mW | 8 mg | Single | 15 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 20 V | - 1.5 V | 5 mA | 500 pA | 300 mW | 8 mg | Single | 15 mS | SMD/SMT | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 20 V | - 2 V | 300 mA | 500 pA | 300 mW | 2,338 g | Single | 80 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | - 50 V | - 1.2 V | 9 mA | 360 mW | Single | 7 mS | Through Hole | Si |
