JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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Toshiba | N-Channel | 10 V | - 50 V | - 0.2 V | 1.2 mA | 0.5 mA | - 50 V | 100 mW | - 55 C | + 125 C | 28 mg | SMD/SMT | Si | |||||
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поиск предложений
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Toshiba | N-Channel | Si | ||||||||||||||||
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поиск предложений
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Toshiba | N-Channel | - 1.5 V | 14 mA | - 50 V | 100 mW | 5 mg | Single | SMD/SMT | Si | |||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 15 V | - 15 V | 5 mA | 50 mA | 200 mW | - 55 C | + 150 C | 11,600 mg | Single | Si | |||||||
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поиск предложений
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ON Semiconductor | N-Channel | 15 V | 50 mA | 50 mA | 200 mW | 8 mg | Si | |||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | 15 V | 50 mA | 50 mA | 200 mW | 8 mg | Si | |||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 30 V | 1.5 mA to 7 mA | 350 mW | 200 mg | Single | 0.0045 S | Through Hole | Si | |||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 40 V | 100 mA | 250 mW | 8 mg | Single | SMD/SMT | Si | ||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | - 40 V | 80 mA | 250 mW | 60 Ohms | 8 mg | Single | SMD/SMT | Si | |||||||||
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поиск предложений
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Central Semiconductor | N-Channel | 40 V | 40 V | 50 mA to 150 mA | 50 mA | 350 mW | 30 Ohms | - 55 C | + 150 C | 39,856 mg | Single | SMD/SMT | Si | |||||
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поиск предложений
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Central Semiconductor | N-Channel | 40 V | 40 V | 10 V | 150 mA | 50 mA | 40 V | 350 mW | 30 Ohms | - 65 C | + 150 C | Single | SMD/SMT | Si | ||||
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поиск предложений
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Central Semiconductor | N-Channel | 40 V | 40 V | 25 mA to 75 mA | 50 mA | 350 mW | 60 Ohms | - 55 C | + 150 C | 8,500 mg | Single | SMD/SMT | Si | |||||
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поиск предложений
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Central Semiconductor | N-Channel | 40 V | 40 V | 5 mA to 30 mA | 50 mA | 350 mW | 100 Ohms | - 55 C | + 150 C | 8 mg | Single | SMD/SMT | Si | |||||
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поиск предложений
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Central Semiconductor | N-Channel | 30 mA | 0.2 uA | 40 V | 350 mW | 100 Ohms | - 65 C | + 150 C | Single | SMD/SMT | Si | |||||||
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поиск предложений
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Central Semiconductor | N-Channel | 78 mg | Si | |||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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Central Semiconductor | P-Channel | 15 V | 30 V | 3 V to 6 V | 30 V | 350 mW | 125 Ohms | - 65 C | + 150 C | Single | SMD/SMT | Si | ||||||
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поиск предложений
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Central Semiconductor | P-Channel | 15 V | 30 V | 30 V | 30 V | 350 mW | 125 Ohms | - 65 C | + 150 C | Single | SMD/SMT | Si | ||||||
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поиск предложений
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Central Semiconductor | P-Channel | 15 V | 30 V | 1 V to 4 V | 30 V | 350 mW | 250 Ohms | - 65 C | + 150 C | Single | SMD/SMT | Si | ||||||
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поиск предложений
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Central Semiconductor | P-Channel | 15 V | 30 V | 1 V to 4 V | 30 V | 350 mW | 250 Ohms | - 65 C | + 150 C | Single | SMD/SMT | Si | ||||||
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поиск предложений
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ON Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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ON Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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поиск предложений
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ON Semiconductor | N-Channel | Si |
