JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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InterFET | P-Channel | 25 V | 2.5 V | - 3.5 mA | 500 mW | Single | 1.5 mS | Through Hole | Si | |||||||||
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InterFET | P-Channel | - 15 V | 30 V | 10 V | - 90 mA | - 15 mA | 500 mW (1/2 W) | 75 Ohms | 1 g | Single | Through Hole | Si | ||||||
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InterFET | P-Channel | - 15 V | 30 V | 6 V | - 60 mA | - 15 mA | 500 mW (1/2 W) | 100 Ohms | Single | Through Hole | Si | |||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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Central Semiconductor | P-Channel | 312,400 mg | Si | |||||||||||||||
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InterFET | P-Channel | - 15 V | 30 V | 4 V | - 25 mA | - 15 mA | 500 mW (1/2 W) | 150 Ohms | Single | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | - 25 V | - 6 V | 10 mA | 300 mW | 10,117 g | Single | Through Hole | Si | |||||||||
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InterFET | N-Channel | - 25 V | - 6 V | 10 mA | 300 mW | Single | 5.5 mS | Through Hole | Si | |||||||||
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Central Semiconductor | N-Channel | 206 mg | Si | |||||||||||||||
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Central Semiconductor | N-Channel | 453,600 mg | Si | |||||||||||||||
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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Central Semiconductor | P-Channel | 206 mg | Si | |||||||||||||||
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Central Semiconductor | P-Channel | 4 V | 10 mA | 40 V | 310 mW | - 65 C | + 150 C | Through Hole | Si | |||||||||
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поиск предложений
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Central Semiconductor | N-Channel | 25 V | 6 V | 20 mA | 30 mA | 25 V | 310 mW | - 65 C | + 150 C | Single | Through Hole | Si | ||||||
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поиск предложений
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Central Semiconductor | N-Channel | 206 mg | Si | |||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | 25 V | 6 V | 20 mA | 30 mA | 25 V | 310 mW | - 65 C | + 150 C | Single | Through Hole | Si | ||||||
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поиск предложений
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Central Semiconductor | N-Channel | 25 V | 6 V | 20 mA | 30 mA | 25 V | 310 mW | - 65 C | + 150 C | Single | Through Hole | Si | ||||||
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поиск предложений
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Central Semiconductor | N-Channel | 25 V | 6 V | 20 mA | 30 mA | 25 V | 310 mW | - 65 C | + 150 C | Single | Through Hole | Si | ||||||
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InterFET | N-Channel | - 50 V | Dual | Si | ||||||||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | 25 V | 5 V | 40 mA | 500 mW (1/2 W) | Single | 5000 uS | Through Hole | Si |
