JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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Central Semiconductor | N-Channel | 312,400 mg | Si | |||||||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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InterFET | N-Channel | - 40 V | - 4 V | 1.8 W | 60 Ohms | Single | Through Hole | Si | ||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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InterFET | N-Channel | 15 V | - 30 V | - 10 V | 50 mA | 500 pA | 1.8 W | 25 Ohms | Single | Through Hole | Si | |||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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InterFET | N-Channel | 15 V | - 30 V | - 10 V | 50 mA | 500 pA | 1.8 W | 25 Ohms | Single | Through Hole | Si | |||||||
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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InterFET | N-Channel | - 40 V | - 6 V | 100 mA | 1.8 W | 40 Ohms | Single | Through Hole | Si | |||||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 30 V | - 6 V | 100 mA | 500 pA | 1.8 W | 40 Ohms | Single | Through Hole | Si | |||||||
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Microchip | Through Hole | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 30 V | - 4 V | 80 mA | 500 pA | 1.8 W | 60 Ohms | 875,650 mg | Single | Through Hole | Si | ||||||
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InterFET | N-Channel | 20 V | - 40 V | - 2 V | 1.2 mA | 1 uA | 300 mW | Single | 700 uS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 40 V | - 2 V | 1.2 mA | 1 uA | 300 mW | Single | 700 uS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 40 V | - 3 V | 3 mA | 1 uA | 300 mW | Single | 1000 uS | Through Hole | Si | |||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 3 V | 3 mA | 300 mW | Single | 1000 uS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 5 V | 7.5 mA | 300 mW | Single | 1300 uS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | - 40 V | - 5 V | 7.5 mA | 300 mW | Single | 1300 uS | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | P-Channel | - 15 V | 25 V | 1.5 V | - 1.2 mA | 1 nA | 500 mW (1/2 W) | Single | 1 mS | Through Hole | Si |
