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Товар	Цена	Manufacturer	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Breakdown Voltage	Gate-Source Cut-off Voltage	Drain-Source Current at Vgs=0	Id - Continuous Drain Current	Maximum Drain Gate Voltage	Pd - Power Dissipation	Rds On - Drain-Source Resistance	Minimum Operating Temperature	Maximum Operating Temperature	Operating Temperature Range	Unit Weight	Configuration
2N4391UB Microchip Technology Microchip Technology	поиск предложений	Microchip	Through Hole	Si
2N4392 InterFET InterFET	поиск предложений
2N4392 Microchip Technology Microchip Technology	поиск предложений
2N4392 PBFREE Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	N-Channel	300 mg	Si
2N4392UB Microchip Technology Microchip Technology	поиск предложений	Microchip	Through Hole	Si
2N4393 InterFET InterFET	поиск предложений	InterFET	N-Channel	20 V	- 40 V	- 3 V	30 mA	12 mA	1.8 W	100 Ohms	5,844 g	Single	Through Hole	Si
2N4393 Microchip Technology Microchip Technology	поиск предложений	Microchip	N-Channel	0.4 V	40 V	3 V	30 mA	12 mA	40 V	1.8 W	100 Ohms	- 65 C	+ 175 C	Single	Through Hole	Si
2N4393 PBFREE Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	N-Channel	1,169 g	Si
2N4393 TIN/LEAD Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	N-Channel	40 V	40 V	3 V	30 mA	50 mA	40 V	1.8 W	100 Ohms	- 65 C	+ 175 C	Single	Through Hole	Si
2N4393UB Microchip Technology Microchip Technology	поиск предложений	Microchip	Through Hole	Si
2N4416 InterFET InterFET	поиск предложений	InterFET	N-Channel	15 V	- 30 V	- 6 V	15 mA	1 nA	300 mW	2,442 g	Single	4000 uS	Through Hole	Si
2N4416 PBFREE Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	Si
2N4416A InterFET InterFET	поиск предложений
2N4416A PBFREE Central Semiconductor Central Semiconductor	поиск предложений
2N4416A TIN/LEAD Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	N-Channel	35 V	35 V	6 V	15 mA	300 mW	- 65 C	+ 200 C	431,107 mg	Single	Through Hole	Si
2N4856 InterFET InterFET	поиск предложений	InterFET	N-Channel	15 V	- 40 V	- 10 V	50 mA	500 pA	1.8 W	25 Ohms	25,292 g	Single	Through Hole	Si
2N4856 Microchip Technology Microchip Technology	поиск предложений	Microchip	Through Hole	Si
2N4856 PBFREE Central Semiconductor Central Semiconductor	поиск предложений
2N4856 TIN/LEAD Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	N-Channel	40 V	10 V	50 mA	40 V	360 mW	25 Ohms	- 65 C	+ 200 C	Single	Through Hole	Si
2N4856A InterFET InterFET	поиск предложений	InterFET	N-Channel	15 V	- 40 V	- 10 V	50 mA	500 pA	1.8 W	25 Ohms	Single	Through Hole	Si
2N4856A PBFREE Central Semiconductor Central Semiconductor	поиск предложений	Central Semiconductor	N-Channel	300 mg	Si
2N4856UB Microchip Technology Microchip Technology	поиск предложений	Microchip	Through Hole	Si
2N4857 InterFET InterFET	поиск предложений	InterFET	N-Channel	15 V	- 40 V	- 6 V	100 mA	500 pA	1.8 W	40 Ohms	543,605 mg	Single	Through Hole	Si
2N4857 Microchip Technology Microchip Technology	поиск предложений	Microchip	Through Hole	Si
2N4857A InterFET InterFET	поиск предложений