JFET
| Товар | Цена | Manufacturer | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cut-off Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Minimum Operating Temperature | Maximum Operating Temperature | Operating Temperature Range | Unit Weight | Configuration | Forward Transconductance - Min | Mounting Style | Technology | |
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поиск предложений
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InterFET | P-Channel | - 10 V | - 30 V | 4 V | - 4.5 mA | 5 mA | 300 mW | 4 g | Single | 1 mS | Through Hole | Si | ||||||
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поиск предложений
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Microchip | P-Channel | 30 V | 0.75 V to 6 V | - 1 mA to - 5 mA | 300 mW | - 65 C | + 200 C | 3,698 g | Single | Through Hole | Si | |||||||
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поиск предложений
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InterFET | P-Channel | - 10 V | - 30 V | 4 V | - 10 mA | 5 mA | 300 mW | 1,204 g | Single | 25 mS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | Si | |||||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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Central Semiconductor | N-Channel | Si | ||||||||||||||||
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поиск предложений
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InterFET | N-Channel | 15 V | - 50 V | - 4 V | 2.5 mA | 400 uA | 300 mW | 1,430 g | Single | 1500 uS | Through Hole | Si | ||||||
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поиск предложений
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поиск предложений
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InterFET | N-Channel | - 50 V | - 6 V | 10 mA | 300 mW | Single | 3000 uS | Through Hole | Si | |||||||||
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поиск предложений
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поиск предложений
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Microchip | N-Channel | 30 V | 30 V | 8 V | 20 mA | 30 V | 300 mW | - 55 C | + 200 C | - 55 C to + 200 C | 1,192 g | Single | Through Hole | Si | ||||
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поиск предложений
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InterFET | N-Channel | - 50 V | 300 mW | 250 Ohms | Single | Through Hole | Si | |||||||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 50 V | - 4.5 V | 5 mA | 200 uA | 250 mW | 8,025 g | Dual | 1000 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 20 V | - 50 V | - 4.5 V | 5 mA | 200 uA | 250 mW | 3,596 g | Dual | 1000 uS | Through Hole | Si | ||||||
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поиск предложений
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InterFET | N-Channel | 25 V | Si | |||||||||||||||
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поиск предложений
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поиск предложений
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InterFET | P-Channel | 25 V | 5.5 V | - 2 mA | 300 mW | 300 Ohms | Single | Through Hole | Si | |||||||||
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поиск предложений
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InterFET | N-Channel | 10 V | - 40 V | - 10 V | 30 mA | 5 mA | 300 mW | 30 Ohms | 433,485 mg | Single | Through Hole | Si | ||||||
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поиск предложений
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Microchip | Through Hole | Si | ||||||||||||||||
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поиск предложений
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Microchip | N-Channel | 40 V | - 40 V | 30 mA | 10 mA | 0.2 V | 0.36 W | 30 Ohms | - 65 C | + 175 C | Single | Through Hole | Si | |||||
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поиск предложений
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Microchip | Through Hole | Si | ||||||||||||||||
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поиск предложений
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Microchip | Through Hole | Si |
